| PART |
Description |
Maker |
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| AT84AD004 AT84XAD004TD |
Dual 8-bit 500 Msps ADC Provides 500 Msps sampling per channel or 1 Gsps sampling from one channel (interleaving mode) and integrates ...
Smart ADC. Dual 8-bit 500 Msps ADC. Temperature range ambient.
|
Atmel
|
| STW45NM50FD09 STW45NM50FD |
45 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET (with fast diode)
N-channel 500 V, 0.07 楼?, 45 A, TO-247 FDmesh垄芒 Power MOSFET (with fast diode)
|
STMicroelectronics
|
| STW29NK50ZD W29NK50ZD |
N-CHANNEL 500V - 0.11 OHM - 29A TO-247 FAST DIODE SUPERMESH MOSFET
N-CHANNEL 500 V - 0.11蟹 - 29A TO-247 Fast Diode SuperMESH??MOSFET
N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Diode SuperMESH⑩ MOSFET
N-CHANNEL 500 V - 0.11?/a> - 29A TO-247 Fast Diode SuperMESH?/a> MOSFET
N-CHANNEL 500 V - 0.11 - 29A TO-247 Fast Diode SuperMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| RFP2N20 FN2881 |
2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET
2A 200V 3.500 Ohm N-Channel Power MOSFET
From old datasheet system
2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| 2SK2876-01MR |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IXTN36N50 |
N-Channel Enhancement Mode 36 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS Corporation
|
| VN0550N3-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 50 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| IXTH30N50 |
MegaMOS FET 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS Corporation
|
|
